Title :
Performance of sulphur-ion-implanted GaAs f.e.t.s
Author :
Higgins, J.A. ; Welch, B.M. ; Eisen, F.H. ; Robinson, G.D.
Author_Institution :
Rockwell International, Science Center, Thousand Oaks, USA
Abstract :
GaAs f.e.t.s have been produced by sulphur-ion implantation that give optimum noise figures as low as 4.6 dB at 10 GHz and maximum available gains of greater than 10 dB at 10 GHz. A considerable degree of uniformity among the devices is observed.
Keywords :
field effect transistors; ion implantation; semiconductor device manufacture; solid-state microwave devices; 10 GHz; S ion implanted GaAs FETs; optimum noise figures;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19760013
