• DocumentCode
    935849
  • Title

    Transistor transit-time oscillator (translator)

  • Author

    Wright, G.T.

  • Author_Institution
    University of Birmingham, Department of Electronic & Electrical Engineering, Birmingham, UK
  • Volume
    12
  • Issue
    2
  • fYear
    1976
  • Firstpage
    37
  • Lastpage
    38
  • Abstract
    Operation of a novel junction-transistor structure as a microwave negative-resistance diode is described. Negative-resistances of ¿25 ¿ at 10 GHz are predicted, corresponding to negative Q-factors of ¿5. Large-signal c.w. power outputs of the order of 1 W from individual devices are indicated. It is expected that device operation in the frequency range 1¿100 GHz should be possible at voltage bias levels from 5 to 50 V.
  • Keywords
    bipolar transistors; microwave oscillators; negative resistance; solid-state microwave devices; transit time devices; large signal CW power outputs; microwave negative resistance diode; negative Q-factors; transistor transit time oscillator; translator; voltage bias levels;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19760029
  • Filename
    4239575
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=935849