DocumentCode
935885
Title
Generation-recombination noise in the channel of GaAs Schottky-gate field-effect transistors
Author
Sodini, D. ; Touboul, Antoine ; Lecoy, G. ; Savelli, M.
Author_Institution
Université des Sciences et Techniques du Languedoc, Centre d´Ã\x89tudes d´Electronique des Solides, Laboratoire associé au CNRS, Montpellier, France
Volume
12
Issue
2
fYear
1976
Firstpage
42
Lastpage
43
Abstract
The low-frequency noise in GaAs m.e.s. f.e.t.s was measured continuously for temperatures varying from 80 to 310K. It presented distinct maxima, suggesting the presence of several g.r. processes. The shift of these peaks at different frequencies (500 Hz to 1 MHz) allowed us to obtain the time constants and the activation energies of four trapping levels. The noise reported here could stem from multilevel trapping in the channel.
Keywords
field effect transistors; noise; 80 to 310K; GaAs Schottky gate field effect transistor; MESFET; activation energies; generation recombination noise; low frequency noise; time constants; trapping levels;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19760033
Filename
4239579
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