DocumentCode :
935889
Title :
MESFET Distributed Amplifier Design Guidelines
Author :
Beyer, James B. ; Prasad, S.N. ; Becker, Robert C. ; Nordman, James E. ; Hohenwarter, Gert K.
Volume :
32
Issue :
3
fYear :
1984
fDate :
3/1/1984 12:00:00 AM
Firstpage :
268
Lastpage :
275
Abstract :
In the paper, the analysis of GaAs MESFET distributed amplifiers and a systematic approach to their design are presented. The analysis focuses on fundamental design considerations and also establishes the maximum gain-bandwidth product of the amplifier.The design approach presented enables one to examine the tradeoffs between the variables, such as the device, the number of devices, and the impedances and cutoff frequency of the lines, and arrive at a design which gives the desired frequency response. Excellent agreement is shown when the theoretically predicted response of a typical amplifier is compared with computer-aided analysis results, and good agreement is shown with previously published experimental results.
Keywords :
Couplings; Cutoff frequency; Distributed amplifiers; Frequency response; Guidelines; Impedance; Inductors; MESFETs; Microwave FETs; Microwave transistors;
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/TMTT.1984.1132664
Filename :
1132664
Link To Document :
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