DocumentCode
935889
Title
MESFET Distributed Amplifier Design Guidelines
Author
Beyer, James B. ; Prasad, S.N. ; Becker, Robert C. ; Nordman, James E. ; Hohenwarter, Gert K.
Volume
32
Issue
3
fYear
1984
fDate
3/1/1984 12:00:00 AM
Firstpage
268
Lastpage
275
Abstract
In the paper, the analysis of GaAs MESFET distributed amplifiers and a systematic approach to their design are presented. The analysis focuses on fundamental design considerations and also establishes the maximum gain-bandwidth product of the amplifier.The design approach presented enables one to examine the tradeoffs between the variables, such as the device, the number of devices, and the impedances and cutoff frequency of the lines, and arrive at a design which gives the desired frequency response. Excellent agreement is shown when the theoretically predicted response of a typical amplifier is compared with computer-aided analysis results, and good agreement is shown with previously published experimental results.
Keywords
Couplings; Cutoff frequency; Distributed amplifiers; Frequency response; Guidelines; Impedance; Inductors; MESFETs; Microwave FETs; Microwave transistors;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/TMTT.1984.1132664
Filename
1132664
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