• DocumentCode
    935889
  • Title

    MESFET Distributed Amplifier Design Guidelines

  • Author

    Beyer, James B. ; Prasad, S.N. ; Becker, Robert C. ; Nordman, James E. ; Hohenwarter, Gert K.

  • Volume
    32
  • Issue
    3
  • fYear
    1984
  • fDate
    3/1/1984 12:00:00 AM
  • Firstpage
    268
  • Lastpage
    275
  • Abstract
    In the paper, the analysis of GaAs MESFET distributed amplifiers and a systematic approach to their design are presented. The analysis focuses on fundamental design considerations and also establishes the maximum gain-bandwidth product of the amplifier.The design approach presented enables one to examine the tradeoffs between the variables, such as the device, the number of devices, and the impedances and cutoff frequency of the lines, and arrive at a design which gives the desired frequency response. Excellent agreement is shown when the theoretically predicted response of a typical amplifier is compared with computer-aided analysis results, and good agreement is shown with previously published experimental results.
  • Keywords
    Couplings; Cutoff frequency; Distributed amplifiers; Frequency response; Guidelines; Impedance; Inductors; MESFETs; Microwave FETs; Microwave transistors;
  • fLanguage
    English
  • Journal_Title
    Microwave Theory and Techniques, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9480
  • Type

    jour

  • DOI
    10.1109/TMTT.1984.1132664
  • Filename
    1132664