Title :
A GaAs FET Model for Large-Signal Applications
Author :
Peterson, Darrell L. ; Pavio, Anthony M., Jr. ; Kim, Bumman
fDate :
3/1/1984 12:00:00 AM
Abstract :
The use of GaAs FET´s under large-signal conditions requires a knowledge of the nonlinear behavior of these devices. A computer program, based on a circuit model with nonlinear elements, has been developed which provides this information. Results from the computer model and examples of its use in microwave circuit design are given.
Keywords :
Application software; Circuits; Frequency measurement; Gallium arsenide; Impedance; Microwave FETs; Microwave measurements; Performance analysis; Scattering parameters; Semiconductor process modeling;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.1984.1132665
