DocumentCode
935900
Title
A GaAs FET Model for Large-Signal Applications
Author
Peterson, Darrell L. ; Pavio, Anthony M., Jr. ; Kim, Bumman
Volume
32
Issue
3
fYear
1984
fDate
3/1/1984 12:00:00 AM
Firstpage
276
Lastpage
281
Abstract
The use of GaAs FET´s under large-signal conditions requires a knowledge of the nonlinear behavior of these devices. A computer program, based on a circuit model with nonlinear elements, has been developed which provides this information. Results from the computer model and examples of its use in microwave circuit design are given.
Keywords
Application software; Circuits; Frequency measurement; Gallium arsenide; Impedance; Microwave FETs; Microwave measurements; Performance analysis; Scattering parameters; Semiconductor process modeling;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/TMTT.1984.1132665
Filename
1132665
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