DocumentCode :
935916
Title :
2-20-GHz GaAs Traveling-Wave Power Amplifier
Author :
Ayasli, Yalcin ; Reynolds, Leonard D. ; Mozzi, Robert L. ; Hanes, Larry K.
Volume :
32
Issue :
3
fYear :
1984
fDate :
3/1/1984 12:00:00 AM
Firstpage :
290
Lastpage :
295
Abstract :
Power amplification in FET traveling-wave amplifiers is examined, and the mechanisms which limit power capability of the amplifier are identified. Design considerations for power amplification are discussed. A novel single-stage and two-stage monolithic GaAs traveling-wave power amplifier with over 250-mW power output in the 2-20-GHz frequency range is described.
Keywords :
Broadband amplifiers; Circuits; FETs; Gallium arsenide; Microwave amplifiers; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Transconductance; Voltage;
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/TMTT.1984.1132667
Filename :
1132667
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=935916
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