DocumentCode :
935938
Title :
A 6-GHz 80-W GaAs FET Amplifier with a TM-Mode Cavity Power Combiner
Author :
Tokumitsu, Yasuyuki ; Saito, Toshiyuki ; Okubo, Naofumi ; Kaneko, Yoshiaki
Volume :
32
Issue :
3
fYear :
1984
fDate :
3/1/1984 12:00:00 AM
Firstpage :
301
Lastpage :
308
Abstract :
A novel 8-way divider/combiner using TM010- and TM020 -mode cavities was developed. This divider/combiner has an insertion loss of 0.2 dB and a bandwidth of 600 MHz in the 6-GHz communications band. For broadening the operating bandwidth of the divider/combiner, two techniques of double cavities and tight coupling are described. Degradation of power-combining efficiency is also discussed when input signals into a power combiner have variations in amplitude and phase. By using this divider/combiner, an experimental 6-GHz 80-W GaAs FET amplifier with a combining efficiency of 85 percent was demonstrated to investigate the feasibility of a solid-state high-power amplifier.
Keywords :
Bandwidth; Coupling circuits; FETs; Gallium arsenide; High power amplifiers; Microwave amplifiers; Power amplifiers; Power combiners; Resonance; Solid state circuits;
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/TMTT.1984.1132669
Filename :
1132669
Link To Document :
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