• DocumentCode
    935952
  • Title

    Wide-bandwidth high-radiance gallium-arsenide light-emitting diodes for fibre-optic communication

  • Author

    Goodfellow, R.C. ; Mabbitt, A.W.

  • Author_Institution
    Plessey Co. Ltd., Allen Clark Research Centre, Towcester, UK
  • Volume
    12
  • Issue
    2
  • fYear
    1976
  • Firstpage
    50
  • Lastpage
    51
  • Abstract
    High-radiance GaAs l.e.d.s with 3 dB modulation bandwidths exceeding 500 MHz have been fabricated from p-n junction layers prepared with very high zinc acceptor doping levels. This development will permit the use of l.e.d.s in near-gigahertz or gigabit/s optical-fibre communication links.
  • Keywords
    light emitting diodes; optical communication equipment; 3 dB modulation bandwidths; Zn acceptor doping levels; fibre optic communication; p-n junction layers; wide bandwidth high radiance GaAs LED;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19760041
  • Filename
    4239587
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=935952