Title :
Wide-bandwidth high-radiance gallium-arsenide light-emitting diodes for fibre-optic communication
Author :
Goodfellow, R.C. ; Mabbitt, A.W.
Author_Institution :
Plessey Co. Ltd., Allen Clark Research Centre, Towcester, UK
Abstract :
High-radiance GaAs l.e.d.s with 3 dB modulation bandwidths exceeding 500 MHz have been fabricated from p-n junction layers prepared with very high zinc acceptor doping levels. This development will permit the use of l.e.d.s in near-gigahertz or gigabit/s optical-fibre communication links.
Keywords :
light emitting diodes; optical communication equipment; 3 dB modulation bandwidths; Zn acceptor doping levels; fibre optic communication; p-n junction layers; wide bandwidth high radiance GaAs LED;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19760041
