A technique to increase the efficiency of high-voltage charge pumps

Author

Hoque, M.R. ; Ahmad, T. ; McNutt, T.R. ; Mantooth, H.A. ; Mojarradi, M.M.

Author_Institution

Dept. of Electr. Eng., Univ. of Arkansas, Fayetteville, AR, USA

Volume

53

Issue

5

fYear

2006

fDate

5/1/2006 12:00:00 AM

Firstpage

364

Lastpage

368

Abstract

A charge pump that utilizes a MOSFET body diode as a charge transfer switch is discussed. The body diode is characterized and a body diode model is developed for simulating the charge pump circuit. A 10% increase of voltage gain has been achieved in the proposed switching technique when compared with a traditional Dickson charge pump. The top plate and bottom plate switching technique have also been illustrated to improve the efficiency of the charge pump. A six-stage Dickson charge pump was designed to produce a 19 V output from a 3.3-V supply, using a 4 MHz, two-phase nonoverlapping clock signal driving the charge pump. The design was fabricated in a 0.35-μm SOI CMOS process. An efficiency of 79% is achieved at a load current of approximately 19 μA.

Keywords

CMOS integrated circuits; MOSFET; charge-coupled devices; semiconductor device models; semiconductor diodes; silicon-on-insulator; 0.35 micron; 19 V; 3.3 V; 4 MHz; Dickson charge pump; MOSFET body diode; SOI CMOS process; body diode model; bottom plate switching technique; charge pump circuit; charge transfer switch; high-voltage charge pumps; top plate switching technique; voltage gain; CMOS process; Charge pumps; Charge transfer; Circuit simulation; Clocks; Diodes; MOSFET circuits; Signal design; Switches; Voltage; Charge pump; charge transfer; dc–dc converter; dc–dc power conversion; silicon-on-insulator (SOI); voltage multiplier;

fLanguage

English

Journal_Title

Circuits and Systems II: Express Briefs, IEEE Transactions on

Publisher

ieee

ISSN

1549-7747

Type

jour

DOI

10.1109/TCSII.2006.869922

Filename

1632345