• DocumentCode
    936033
  • Title

    Monte Carlo simulation of current transport in forward-biased Schottky-barrier diodes

  • Author

    Baccarani, G. ; Mazzone, A.M.

  • Author_Institution
    UniversitÃ\xa0 di Bologna, Istituto di Elettronica, Bologna, Italy
  • Volume
    12
  • Issue
    2
  • fYear
    1976
  • Firstpage
    59
  • Lastpage
    60
  • Abstract
    The transport of carriers across the semiconductor space-charge region of a forward-biased Schottky-barrier diode is investigated by a Monte Carlo simulation of the transport process. The electron distribution function at the m.s. boundary turns out to be hemi-Maxwellian, but the electron concentration is about one-half of that predicted by the t.d. theory.
  • Keywords
    Monte Carlo methods; Schottky-barrier diodes; Monte Carlo simulation; current transport; electron concentration; electron distribution function; forward biased Schottky barrier diodes; semiconductor space charge region;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19760048
  • Filename
    4239594
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=936033