Title :
Heatsinking GaAs 4--18 GHz Gunn and IMPATT devices
Author :
Lindstr¿¿m, C. ; Jeppsson, B.
Author_Institution :
Microwave Institute Foundation, Stockholm, Sweden
Abstract :
A method for heatsinking high-power GaAs Gunn and IMPATT devices for the frequency range 4--18 GHz is described. The method is suitable for large-scale fabrication of devices, with high reproducibility and high quality. Typical microwave results are presented.
Keywords :
Gunn devices; IMPATT devices; heat sinks; solid-state microwave devices; 4 to 18 GHz; GaAs Gunn devices; GaAs IMPATT devices; heatsinking; microwave results;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19760054
