DocumentCode
936115
Title
Improved efficiency microwave BARITT oscillators by delayed injection
Author
Eknoyan, O. ; Sze, S.M. ; Yang, E.S. ; Ryder, R.M.
Author_Institution
Columbia University, New York, N.Y.
Volume
63
Issue
11
fYear
1975
Firstpage
1620
Lastpage
1621
Abstract
A new microwave BARITT diode structure which utilizes an intentionally added retarding-field region is presented. By taking advantage of the carrier diffusion at low velocities in this region, the injected current is delayed relative to the ac voltage and improved efficiency diodes are obtained. Microwave CW oscillation at C band with efficiency of ∼4 percent has been realized. Although the efficiency is improved over previous BARITT diodes, it is believed that considerable further improvements are possible by further optimization.
Keywords
Current density; Delay; Gettering; MOSFETs; Microwave oscillators; Schottky diodes; Semiconductor diodes; Silicon; Surface treatment; Voltage;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1975.10017
Filename
1451946
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