DocumentCode :
936143
Title :
Measurement of the electron velocity/field characteristics of GaxIn1-xSb by a microwave-heating technique
Author :
Kawashima, Mitsumasa ; Ohta, Hitoyoshi ; Kataoka, S.
Author_Institution :
Electrotechnical Laboratory, Tokyo, Japan
Volume :
12
Issue :
3
fYear :
1976
Firstpage :
71
Lastpage :
72
Abstract :
The electron velocity/field characteristics of GaxIn1-xSb in the composition range 0.4 < x < 0.9 are measured by a microwave-heating technique at 35 GHz. The threshold electric field for a negative differential mobility lies in the range 430--1200 V/cm. depending on x. Most samples show a negative differential mobility, ranging from 0.1 to 0.3 times the low-field mobility, almost independently of the composition x.
Keywords :
III-V semiconductors; carrier mobility; gallium compounds; high field effects; 35 GHz; GaxIn1-xSb; electron velocity/field characteristics; microwave heating techniques; negative differential mobility; threshold electric field;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19760058
Filename :
4239605
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=936143
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