Title :
Design technique for microwave-transistor power amplifiers
Author_Institution :
University of California, Department of Electrical Engineering & Computer Science, Santa Barbara, USA
Abstract :
A design technique has been developed which yields the added-power circuit efficiency of a microwave-transistor power amplifier with arbitrary output termination. Good agreement between theory and experiment has been achieved with a 1 W bipolar junction transistor operating at 1.3 GHz.
Keywords :
bipolar transistors; microwave amplifiers; power amplifiers; solid-state microwave circuits; 1 W bipolar junction transistor; 1.3 GHz; added power circuit efficiency; arbitrary output termination; microwave transistor power amplifiers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19760060
