Title :
Negative Resistance Regions in the Collector Characteristics of the Point-Contact Transistor
Author_Institution :
Bell Tel. Labs., Inc., Allentown, Pa.
Abstract :
The negative resistance regions in the active portion of the point-contact collector characteristics are characterized in terms of three unique types of anomalies in the current multiplication properties of the device. While the interaction of the ¿ anomalies and the associated circuitry result in a measuring circuit instability, the negative resistances are true device properties which are attributable to variations in the collection efficiency of the reverse biased collector junction.
Keywords :
Circuit testing; Electrical resistance measurement; Germanium; Manufacturing; Oscillators; Oscilloscopes; Power dissipation; Production; Shape; Voltage;
Journal_Title :
Proceedings of the IRE
DOI :
10.1109/JRPROC.1956.274852