DocumentCode
936470
Title
GaAs Monolithic Low-Power Amplifiers with RC Parallel Feedback (Short Paper)
Author
Jun Tajima ; Yamao, Yasushi ; Sugeta, T. ; Hirayama, Motoko
Volume
32
Issue
5
fYear
1984
fDate
5/1/1984 12:00:00 AM
Firstpage
542
Lastpage
544
Abstract
GaAs monolithic broad-band low-power-dissipated amplifiers with inductive/resistive load and RC parallel feedback circuits have been developed. An inductive load amplifier provides a gain of 8 dB, a 3-dB bandwidth of 2.5 GHz, and a noise figure of 2.7 dB at 1 GHz with less than + 1-V supply voltage and very low-power dissipation of 20 mW. A resistive load two-stage amplifier provides a gain of 15 dB and a 3-dB bandwidth of 2 GHz. Input and output reflection coefficients at 1 GHz are -13 dB and -21 dB, respectively.
Keywords
Capacitance; Circuits; FETs; Feedback; Gallium arsenide; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Reflection; Threshold voltage;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/TMTT.1984.1132722
Filename
1132722
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