DocumentCode
936503
Title
On Temperature Characteristics for a GaAs Monolithic Broad-Band Amplifier Having Resistive Loads (Short Papers)
Author
Honjo, Kazuhiko
Volume
32
Issue
5
fYear
1984
fDate
5/1/1984 12:00:00 AM
Firstpage
552
Lastpage
553
Abstract
Temperature characteristics for a GaAs monolithic broad-band amplifier having resistive loads were investigated. It was demonstrated that gain versus temperature characteristics for the amplifier are self-compensated and that the bandwidth for the amplifier becomes narrow when ambient temperature increases.
Keywords
Bandwidth; Biological materials; Boundary conditions; Broadband amplifiers; Cooling; Electromagnetic heating; Gallium arsenide; Ion implantation; Slabs; Temperature;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/TMTT.1984.1132725
Filename
1132725
Link To Document