DocumentCode :
936527
Title :
Coherent Gunn oscillations in GaxIn1-xSb
Author :
Segawa, K. ; Miki, H. ; Otsubo, M. ; Shirahata, K. ; Fujibayashi, K.
Author_Institution :
Mitsubishi Electric Corporation, Central Research Laboratory, Itami, Japan
Volume :
12
Issue :
5
fYear :
1976
Firstpage :
124
Lastpage :
125
Abstract :
Gunn oscillations in GaxIn1-xSb were observed in the composition range 0.40 ⩽ X ⩽ 0.91. Negative resistance exists in the same composition range investigated. The threshold field for the current oscillation was in the range 430--790 V/cm.
Keywords :
Gunn effect; III-V semiconductors; gallium compounds; indium compounds; negative resistance effects; GaxIn1-xSb; coherent Gunn oscillations; current oscillation; negative resistance; threshold field;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19760098
Filename :
4239647
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=936527
بازگشت