Title :
New semiconductor contact technology
Author :
Sullivan, A.B.J.
Author_Institution :
Services Electronics Research Laboratory, Baldock, UK
Abstract :
Metals have been deposited on semiconductors from standard plating solutions, in defined areas which have been lightly damaged by ion bombardment. The contacts are either ohmic or rectifying, depending on bombardment dose and plating conditions. The process has been used to make gallium-arsenide f.e.t.s.
Keywords :
electrical contacts; electroplating; field effect transistors; ohmic contacts; semiconductor device manufacture; GaAs FETs; ion bombardment; ohmic contacts; selected area electroplating; semiconductor contact technology;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19760105
