• DocumentCode
    936669
  • Title

    Comparison of high-efficiency GaAs IMPATT designs

  • Author

    Kuv¿¿s, R.L.

  • Author_Institution
    Rockwell International, Science Center, Thousand Oaks, USA
  • Volume
    12
  • Issue
    6
  • fYear
    1976
  • Firstpage
    143
  • Lastpage
    144
  • Abstract
    Calculations of maximum generated r.f. powers are presented for GaAs single-drift Read, double-drift Read and hybrid Read structures at 10 GHz. The single-drift Read diode gives the highest output power in c.w. applications, and the double-drift design is superior in pulsed operation.
  • Keywords
    IMPATT diodes; solid-state microwave devices; 10 GHz; CW applications; RF power; Read diode; double drift Read structures; high efficiency GaAs IMPATT designs; hybrid Read structures; output power; pulsed operation; single drift Read structures;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19760112
  • Filename
    4239662
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=936669