• DocumentCode
    936676
  • Title

    Equivalent-circuit parameters of a silicon avalanche photodiode

  • Author

    Ozeki, Takeshi ; Watanabe, Atsuyori

  • Author_Institution
    Communications Research Centre, Department of Communications, Ottawa, Canada
  • Volume
    12
  • Issue
    6
  • fYear
    1976
  • Firstpage
    144
  • Lastpage
    145
  • Abstract
    The dependence of the relative phase shift in a silicon avalanche photodiode on the multiplication is used for the determination of the intrinsic response time in the avalanche region. The value of the intrinsic response time of a silicon avalanche photodiode was found to be 0.85 ps. The procedure used to estimate the equivalent-circuit parameters of the detector is also described.
  • Keywords
    avalanche diodes; equivalent circuits; photodiodes; Si avalanche photodiode; equivalent circuit parameters; intrinsic response time; relative phase shift;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19760113
  • Filename
    4239663
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=936676