Title :
Equivalent-circuit parameters of a silicon avalanche photodiode
Author :
Ozeki, Takeshi ; Watanabe, Atsuyori
Author_Institution :
Communications Research Centre, Department of Communications, Ottawa, Canada
Abstract :
The dependence of the relative phase shift in a silicon avalanche photodiode on the multiplication is used for the determination of the intrinsic response time in the avalanche region. The value of the intrinsic response time of a silicon avalanche photodiode was found to be 0.85 ps. The procedure used to estimate the equivalent-circuit parameters of the detector is also described.
Keywords :
avalanche diodes; equivalent circuits; photodiodes; Si avalanche photodiode; equivalent circuit parameters; intrinsic response time; relative phase shift;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19760113
