Title :
Nickel-silicidation process using hydrogen implantation
Author :
Choi, C.-J. ; Song, S.-A. ; Ok, Y.-W. ; Seong, T.-Y.
Author_Institution :
Anal. Eng. Center, Samsung Adv. Inst. of Technol., Suwon, South Korea
fDate :
3/18/2004 12:00:00 AM
Abstract :
The effect of hydrogen implantation on a nickel silicide process has been investigated. X-ray photoemission spectroscopy results show that the hydrogen implantation is effective in suppressing the oxidation of NiSi. It is further shown that the junction leakage current of the implanted samples is about one order of magnitude lower than that of the unimplanted ones.
Keywords :
X-ray photoelectron spectra; hydrogen; ion implantation; leakage currents; nickel compounds; oxidation; NiSi oxidation; NiSi:H; X-ray photoemission spectra; hydrogen implantation; junction leakage current; nickel silicide process;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20040251
