Title :
C.W. oscillation with p+-p-n+ silicon IMPATT diodes in 200 GHz and 300 GHz bands
Author :
Ino, M. ; Ishibashi, Takayuki ; Ohmori, M.
Author_Institution :
NTT, Electrical Communication Laboratories, Musashino, Japan
Abstract :
Submillimetre-wave silicon single-drift-region IMPATT diodes with a p+¿p¿n+ structure have been fabricated by ion implantation. C.W. output powers of 7.5 mW at 285 GHz and 78 mW at 185 GHz were obtained. The maximum c.w. oscillation frequency observed was 394 GHz.
Keywords :
IMPATT diodes; ion implantation; semiconductor device manufacture; solid-state microwave devices; 200 GHz; 300 GHz; CW oscillation; CW output powers; ion implantation; p+-p-n+ Si IMPATT diodes; submillimetre wave Si single drift region IMPATT diodes;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19760115
