Title :
Amplification with 3-terminal avalanche devices
Author :
Lefebvre, M. ; Crosnier, Y. ; Salmerg, G.
Author_Institution :
Université des Sciences & Techniques de Lille, Centre Hyperfréquences & Semiconducteurs, ERA au CNRS 454, Villeneuve d´Ascq, France
Abstract :
The letter investigates the influence of a thermionic-type injected current on the dynamic operating conditions and performance of GaAs impatt diodes. For this study, the computer program developed for high-efficiency impatt diodes has been used extensively. The work shows that interesting results can be obtained in X-band and that the practical realisation of such a device would be possible by using a transistor in which the transistor effect, avalanche effect and transit-time effect are used in combination.
Keywords :
IMPATT diodes; electronics applications of computers; microwave amplifiers; solid-state microwave devices; 3-terminal avalanche devices; GaAs IMPATT diodes; X-band; computer program; microwave device; thermionic type injection current; transistor effect; transit time effect;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19760121
