• DocumentCode
    936761
  • Title

    Amplification with 3-terminal avalanche devices

  • Author

    Lefebvre, M. ; Crosnier, Y. ; Salmerg, G.

  • Author_Institution
    Université des Sciences & Techniques de Lille, Centre Hyperfréquences & Semiconducteurs, ERA au CNRS 454, Villeneuve d´Ascq, France
  • Volume
    12
  • Issue
    7
  • fYear
    1976
  • Firstpage
    154
  • Lastpage
    155
  • Abstract
    The letter investigates the influence of a thermionic-type injected current on the dynamic operating conditions and performance of GaAs impatt diodes. For this study, the computer program developed for high-efficiency impatt diodes has been used extensively. The work shows that interesting results can be obtained in X-band and that the practical realisation of such a device would be possible by using a transistor in which the transistor effect, avalanche effect and transit-time effect are used in combination.
  • Keywords
    IMPATT diodes; electronics applications of computers; microwave amplifiers; solid-state microwave devices; 3-terminal avalanche devices; GaAs IMPATT diodes; X-band; computer program; microwave device; thermionic type injection current; transistor effect; transit time effect;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19760121
  • Filename
    4239672
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=936761