Title :
High-speed InGaAsP/InP multiple-quantum-well laser
Author :
Lipsanen, H. ; Coblentz, D.L. ; Logan, R.A. ; Yadvish, R.D. ; Morton, P.A. ; Temkin, H.
Author_Institution :
AT&T Bell Lab., Murray Hill, NJ, USA
fDate :
7/1/1992 12:00:00 AM
Abstract :
The authors describe practical high-speed InGaAsP/InP lasers based on compressively strained quantum wells. Buried heterostructure lasers with threshold currents of 10 mA and slope efficiencies of 0.23 mW/mA are used. A modulation bandwidth of 20 GHz is obtained at a low drive current of 90 mA. A K factor of 0.25 ns is obtained and the intrinsic bandwidth of these lasers is estimated at 35 GHz.<>
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; optical modulation; semiconductor junction lasers; 0.25 ns; 10 mA; 20 GHz; 35 GHz; 90 mA; InGaAsP-InP; K factor; buried heterostructure diode lasers; compressively strained quantum wells; high-speed; intrinsic bandwidth; low drive current; modulation bandwidth; multiple-quantum-well laser; semiconductor quantum wells; slope efficiencies; threshold currents; Bandwidth; Capacitive sensors; Epitaxial growth; Indium phosphide; Lattices; Masers; Quantum well devices; Quantum well lasers; Semiconductor lasers; Threshold current;
Journal_Title :
Photonics Technology Letters, IEEE
