Title :
High temperature, high power InGaAs/GaAs quantum-well lasers with lattice-matched InGaP cladding layers
Author :
Wu, M.C. ; Chen, Y.K. ; Kuo, J.M. ; Chin, M.A. ; Sergent, A.M.
Author_Institution :
AT&T Bell Lab., Murray Hill, NJ, USA
fDate :
7/1/1992 12:00:00 AM
Abstract :
The authors report the high-temperature and high-power operation of strained-layer InGaAs/GaAs quantum well lasers with lattice-matched InGaP cladding layers grown by gas-source molecular beam epitaxy. Self-aligned ridge waveguide lasers of 3- mu m width were fabricated. These lasers have low threshold currents (7 mA for 250- mu m-long cavity and 12 mA for 500- mu m-long cavity), high external quantum efficiencies (0.9 mW/mA), and high peak powers (160 mW for 3- mu m-wide lasers and 285 mW for 5- mu m-wide laser) at room temperature under continuous wave (CW) conditions. The CW operating temperature of 185 degrees C is the highest ever reported for InGaAs/GaAs/InGaP quantum well lasers, and is comparable to the best result (200 degrees C) reported for InGaAs/GaAs/AlGaAs lasers.<>
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; molecular beam epitaxial growth; semiconductor growth; semiconductor junction lasers; 12 mA; 160 mW; 185 degC; 250 micron; 3 micron; 500 micron; 7 mA; CW lasing; CW operating temperature; InGaAs-GaAs; InGaP; MBE; cladding layers; continuous wave; gas-source molecular beam epitaxy; high external quantum efficiencies; high peak powers; high power; high-temperature; laser cavities; lattice-matched; low threshold currents; quantum-well lasers; ridge waveguide lasers; room temperature; self-aligned; semiconductors; strained-layer; Chemical lasers; Gallium arsenide; Gas lasers; Indium gallium arsenide; Optical waveguides; Power lasers; Quantum well lasers; Semiconductor lasers; Temperature; Waveguide lasers;
Journal_Title :
Photonics Technology Letters, IEEE
