Title :
Gain-coupled distributed feedback semiconductor lasers with an absorptive conduction-type inverted grating
Author :
Luo, Y. ; Cao, H.-L. ; Dobashi, M. ; Hosomatsu, H. ; Nakano, Y. ; Tada, K.
Author_Institution :
Opt. Measure. Technol. Dev. Co. Ltd., Tokyo, Japan
fDate :
7/1/1992 12:00:00 AM
Abstract :
A gain-coupled (GC) distributed feedback (DFB) semiconductor laser with an absorptive conduction-type-inverted grating is proposed. Devices based on GaAlAs/GaAs materials are fabricated using two-step OMVPE. By inverting the conduction type of the absorptive region, threshold current is lowered by 10 mA, which is to compensate for the threshold increase due to extra absorption. In addition, nonlinear output property associated with the saturable nature of the absorption is eliminated. An ultralow chirping capability under gain switching high speed modulation and the narrow linewidth nature of this laser are experimentally studied.<>
Keywords :
III-V semiconductors; aluminium compounds; diffraction gratings; distributed feedback lasers; gallium arsenide; optical modulation; semiconductor growth; semiconductor junction lasers; spectral line breadth; vapour phase epitaxial growth; GaAlAs-GaAs; absorptive conduction-type inverted grating; distributed feedback semiconductor lasers; gain-coupled; narrow linewidth nature; r gain switching high speed modulation; threshold current; two-step OMVPE; ultralow chirping capability; Absorption; Conducting materials; Distributed feedback devices; Gallium arsenide; Gratings; Laser feedback; Optical materials; Semiconductor lasers; Semiconductor materials; Threshold current;
Journal_Title :
Photonics Technology Letters, IEEE
