Title :
40 AA continuous tuning of a GaInAsP/InP vertical-cavity surface-emitting laser using an external mirror
Author :
Yokouchi, N. ; Miyamoto, Takahiro ; Uchida, T. ; Inaba, Y. ; Koyama, F. ; Iga, K.
Author_Institution :
Precision & Intelligence Lab., Tokyo Inst. of Technol., Yokohama, Japan
fDate :
7/1/1992 12:00:00 AM
Abstract :
Continuous tuning of 40 AA was achieved in a GaInAsP/InP vertical-cavity surface-emitting laser for the first time. The cavity length was directly changed by slightly moving an external mirror. The device was grown by chemical beam epitaxy (CBE) and the experiment was performed at low temperature. The result indicates that a short cavity structure can provide pure continuous wavelength tuning because of its wide longitudinal mode spacing.<>
Keywords :
III-V semiconductors; chemical beam epitaxial growth; gallium arsenide; gallium compounds; indium compounds; laser accessories; laser cavity resonators; laser modes; laser tuning; mirrors; semiconductor growth; semiconductor junction lasers; CBE; GaInAsP-InP; cavity length; chemical beam epitaxy; continuous tuning; external mirror; low temperature; pure continuous wavelength tuning; semiconductors; short cavity structure; vertical-cavity surface-emitting laser; wide longitudinal mode spacing; Chemical lasers; Epitaxial growth; Indium phosphide; Laser beams; Laser tuning; Mirrors; Molecular beam epitaxial growth; Surface emitting lasers; Temperature; Vertical cavity surface emitting lasers;
Journal_Title :
Photonics Technology Letters, IEEE
