DocumentCode :
936963
Title :
Linear composite MOSFET: theory, design, and applications
Author :
Cheng, Michael C H ; Toumazou, Chris
Author_Institution :
Dept. of Electr. & Electron. Eng., Imperial Coll. of Sci., Technol. & Med., London, UK
Volume :
40
Issue :
5
fYear :
1993
fDate :
5/1/1993 12:00:00 AM
Firstpage :
297
Lastpage :
306
Abstract :
This work presents the theory, design, and applications of a new cell for MOS linear circuit design the linear composite MOSFET (COMFET). The approach exploits the square-law saturated drain current equation of the MOSFET, and entails the design of a linear COMFET circuit, with both its drain and source currents linearly related to its gate-source voltage, as a basic linear circuit synthesis block. General applications, including amplifiers, transconductors, filters, and multipliers using this block, are described and measured results for circuits implemented in a CMOS 1.5-μm process technology are shown to demonstrate the design flexibility of the approach
Keywords :
CMOS integrated circuits; insulated gate field effect transistors; linear integrated circuits; 1.5 micron; CMOS; MOS linear circuit design; amplifiers; design flexibility; filters; gate-source voltage; linear COMFET circuit; linear composite MOSFET; multipliers; source currents; square-law saturated drain current equation; transconductors; CMOS process; CMOS technology; Circuit synthesis; Equations; Filters; Flexible printed circuits; Linear circuits; MOSFET circuits; Transconductors; Voltage;
fLanguage :
English
Journal_Title :
Circuits and Systems I: Fundamental Theory and Applications, IEEE Transactions on
Publisher :
ieee
ISSN :
1057-7122
Type :
jour
DOI :
10.1109/81.232574
Filename :
232574
Link To Document :
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