Ingaasp/ingaasp multiple-quantum-well modulator with improved saturation intensity and bandwidth over 20 ghz

Author

Devaux, F. ; Bigan, E. ; Ougazzaden, A. ; Pierre, B. ; Huet, F. ; Carré, M. ; Carenco, A.

Author_Institution

CNET, Bagneux, France

Volume

4

Issue

7

fYear

1992

fDate

7/1/1992 12:00:00 AM

Firstpage

720

Lastpage

723

Abstract

A single-mode modulator was realized from an AP-MOCVD grown structure. The multiple-quantum-well electroabsorptive material is made of shallow InGaAsP wells separated by InGaAsP barriers. It exhibits at 1.54 mu m (TE) a 17 dB extinction ratio for a 3 V drive voltage, a 2.7 dB on-state loss and a small-signal bandwidth over 20 GHz with 1-2 mW of coupled optical power.<>

Keywords

III-V semiconductors; electro-optical devices; electroabsorption; gallium arsenide; gallium compounds; indium compounds; optical modulation; optical saturation; 1 to 2 mW; 1.54 micron; 2.7 dB; 20 GHz; 3 V; AP-MOCVD grown structure; IR; InGaAsP barriers; InGaAsP-InGaAsP; SQW; coupled optical power; drive voltage; electroabsorptive material; extinction ratio; multiple-quantum-well modulator; on-state loss; optical constants; saturation intensity; semiconductors; shallow InGaAsP wells; single-mode modulator; small-signal bandwidth; Bandwidth; Extinction ratio; Intensity modulation; Optical coupling; Optical losses; Optical materials; Optical saturation; Quantum well devices; Tellurium; Voltage;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.145250

Filename

145250