Title :
GaAs power f.e.t.s with semi-insulated gates
Author :
Macksey, H.M. ; Shaw, D.W. ; Wisseman, W.R.
Author_Institution :
Texas Instruments Incorporated, Dallas, USA
Abstract :
GaAs semi-insulated-gate f.e.t.s (s.i.g.f.e.t.s) have been fabricated by Ar+ bombardment in the gate region. The d c. characteristics and microwave performance are compared with those of conventional power m.e.s.f.e.t.s fabricated from the same slice. Up to 2.9W output power with 4dB gain has been obtained from s.i.g.f.e.t. devices at 8 GHz.
Keywords :
field effect transistors; ion implantation; power transistors; solid-state microwave devices; Ar+ bombardment; DC characteristics; GaAs; ion implantation; microwave performance; power FET; semiinsulated gates;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19760149
