DocumentCode
937072
Title
GaAs power f.e.t.s with semi-insulated gates
Author
Macksey, H.M. ; Shaw, D.W. ; Wisseman, W.R.
Author_Institution
Texas Instruments Incorporated, Dallas, USA
Volume
12
Issue
8
fYear
1976
Firstpage
192
Lastpage
193
Abstract
GaAs semi-insulated-gate f.e.t.s (s.i.g.f.e.t.s) have been fabricated by Ar+ bombardment in the gate region. The d c. characteristics and microwave performance are compared with those of conventional power m.e.s.f.e.t.s fabricated from the same slice. Up to 2.9W output power with 4dB gain has been obtained from s.i.g.f.e.t. devices at 8 GHz.
Keywords
field effect transistors; ion implantation; power transistors; solid-state microwave devices; Ar+ bombardment; DC characteristics; GaAs; ion implantation; microwave performance; power FET; semiinsulated gates;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19760149
Filename
4239705
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