Title :
Beam-supported AlN thin film bulk acoustic resonators
Author :
Callaghan, Lori A. ; Lughi, Vanni ; MacDonald, Noel C. ; Clarke, David R.
Author_Institution :
Dept. of Mech. Eng., California Univ., Santa Barbara, CA
fDate :
5/1/2006 12:00:00 AM
Abstract :
A novel, suspended thin film bulk acoustic wave resonator (SFBAR) has been fabricated from an aluminum nitride film sputtered directly on a (100) silicon substrate. The suspended membrane design uses thin beams to support, as well as electrically connect, the resonator and has been fabricated using both thin film processing and bulk silicon micromachining. The quality factor and the effective electromechanical coupling coefficient were characterized as a function of the number and the length of the support beams. The length of the support beams was found to affect neither the quality factor at resonance nor the effective electromechanical coupling factor. However, longer support beams did facilitate better frequency pair response. Device performance varied with the number of support beams: 70% of the resonators tested showed a higher figure of merit with eight support beams than with four support beams
Keywords :
acoustic resonators; aluminium compounds; electromechanical effects; micromachining; piezoelectric devices; piezoelectric thin films; thin film devices; (100) silicon substrate; AlN; Si; aluminum nitride; beam-supported AlN thin film bulk acoustic resonators; device performance; electromechanical coupling coefficient; micromachining; quality factor; suspended membrane design; Acoustic beams; Acoustic waves; Aluminum nitride; Film bulk acoustic resonators; Optical coupling; Q factor; Semiconductor thin films; Silicon; Sputtering; Transistors;
Journal_Title :
Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on
DOI :
10.1109/TUFFC.2006.1632689
