Title :
10-Gb/s high-speed monolithically integrated photoreceiver using InGaAs p-i-n PD and planar doped InAlAs/InGaAs HEMTs
Author :
Akahori, Y. ; Akatsu, Y. ; Kohzen, A. ; Yoshida, J.
Author_Institution :
NTT Opto-Electron. Lab., Kanagawa, Japan
fDate :
7/1/1992 12:00:00 AM
Abstract :
A long-wavelength monolithically integrated photoreceiver which is capable of operation at a 10-Gb/s NRZ light signal is described. The photoreceiver was fabricated using an Si-planar-doping technique to enhance the uniformity and transconductance of HEMTs and using Be-ion implantation technique. The circuit consists of a p-i-n PD, a transimpedance amplifier, and a buffer stage to provide an output impedance of 50 Omega . The photoreceiver demonstrated a 3-dB down bandwidth of 8 GHz and the responsivity of 158 V/W. The measured input noise current was 20 pA/ square root Hz and the calculated sensitivity at 10-Gb/s NRZ signal was -16.5 dBm. The receiver is the first monolithically integrated p-i-n-HEMT receiver capable of receiving a 10-Gb/s NRZ light signal.<>
Keywords :
III-V semiconductors; aluminium compounds; field effect integrated circuits; gallium arsenide; indium compounds; infrared detectors; integrated optoelectronics; optical communication equipment; p-i-n diodes; photodetectors; photodiodes; receivers; 1.3 micron; 10 Gbit/s; 8 GHz; III-V semiconductor; InAlAs-InGaAs; InAlAs:Si; InGaAs p-i-n PD; InGaAs:Be; NRZ light signal; Si-planar-doping; bandwidth; buffer stage; high-speed monolithically integrated photoreceiver; input noise current; long-wavelength; output impedance; photodiode; planar doped InAlAs-InGaAs HEMT; responsivity; sensitivity; transconductance; transimpedance amplifier; uniformity; Bandwidth; Circuits; Current measurement; HEMTs; Impedance; MODFETs; Noise measurement; Optical signal processing; PIN photodiodes; Transconductance;
Journal_Title :
Photonics Technology Letters, IEEE
