DocumentCode
937197
Title
Experimental study of transport in nanoscale planar MOSFETs near the ballistic limit
Author
Boeuf, Frédéric ; Jehl, Xavier ; Sanquer, Marc ; Skotnicki, Thomas
Author_Institution
STMicroelectronics, Crolles, France
Volume
3
Issue
1
fYear
2004
fDate
3/1/2004 12:00:00 AM
Firstpage
105
Lastpage
109
Abstract
Using standard planar 22-nm-nMOS devices featuring a typical metalurgical length lower than 10 nm, we investigated the impact of nanoscale phenomena on device behavior. The data show that direct source-drain tunneling dominates the device leakage below 250 K and that carrier transport approaches the ballistic limit. The significant contribution of access resistance is revealed by low-temperature measurements below the superconducting transition of the cobalt disilicide contacts.
Keywords
MOSFET; ballistic transport; carrier mobility; cobalt compounds; superconducting transitions; 22 nm; CoSi2; anoscale planar MOSFET; ballistic limit; carrier transport; cobalt disilicide contacts; source-drain tunneling; superconducting transition; transport analysis; Ballistic transport; CMOS technology; Contact resistance; Effective mass; Electrical resistance measurement; MOS devices; MOSFETs; Silicon; Threshold voltage; Tunneling;
fLanguage
English
Journal_Title
Nanotechnology, IEEE Transactions on
Publisher
ieee
ISSN
1536-125X
Type
jour
DOI
10.1109/TNANO.2003.820786
Filename
1278277
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