• DocumentCode
    937207
  • Title

    Novel many-body transport phenomenon in coupled quantum wires

  • Author

    Sasaki, Takahiko ; Morimoto, Takahiro ; Iwase, Yoshikazu ; Aoki, Nobuyuki ; Ochiai, Yuichi ; Shailos, Alexandros ; Bird, Jonathan P. ; Lilly, Michael P. ; Reno, John L. ; Simmons, Jerry A.

  • Author_Institution
    Dept. of Mater. Technol., Chiba Univ., Japan
  • Volume
    3
  • Issue
    1
  • fYear
    2004
  • fDate
    3/1/2004 12:00:00 AM
  • Firstpage
    110
  • Lastpage
    114
  • Abstract
    We demonstrate the presence of a resonant interaction between a pair of coupled quantum wires, which are formed in the ultrahigh mobility two-dimensional electron gas of a GaAs/AlGaAs quantum well. The coupled-wire system is realized by an extension of the split-gate technique, in which bias voltages are applied to Schottky gates on the semiconductor surface, to vary the width of the two quantum wires, as well as the strength of the coupling between them. The key observation of interest here is one in which the gate voltages used to define one of the wires are first fixed, after which the conductance of this wire is measured as the gate voltage used to form the other wire is swept. Over the range of gate voltage where the swept wire pinches off, we observe a resonant peak in the conductance of the fixed wire that is correlated precisely to this pinchoff condition. In this paper, we present new results on the current- and temperature-dependence of this conductance resonance, which we suggest is related to the formation of a local moment in the swept wire as its conductance is reduced below 2e2/h.
  • Keywords
    III-V semiconductors; Kondo effect; aluminium compounds; electrical conductivity; electron mobility; gallium arsenide; semiconductor quantum wells; semiconductor quantum wires; two-dimensional electron gas; GaAs-AlGaAs; GaAs/AlGaAs quantum well; Schottky gates; conductance resonance; coupled Quantum wires; coupled quantum wires; many-body transport properties; resonant interaction; semiconductor surface; split-gate technique; ultrahigh mobility two-dimensional electron gas; wire conductance; Birds; Laboratories; Nanoscale devices; Quantum computing; Quantum dots; Resonance; Semiconductor nanostructures; Split gate flash memory cells; Voltage; Wires;
  • fLanguage
    English
  • Journal_Title
    Nanotechnology, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1536-125X
  • Type

    jour

  • DOI
    10.1109/TNANO.2003.820520
  • Filename
    1278278