DocumentCode
937254
Title
Fabrication of planar Gunn-effect logic device with self-aligned Schottky-barrier gates
Author
Wada, O. ; Yanagisawa, S. ; Takanashi, Hiroyuki
Author_Institution
Fujitsu Laboratories Ltd., Kawasaki, Japan
Volume
12
Issue
9
fYear
1976
Firstpage
215
Lastpage
217
Abstract
A method of fabricating planar Gunn-effect devices with Schottky-barrier gates has been improved by using the self-alignment technique. Dual-gate devices fabricated by this method have fine geometries and exhibited sufficiently good performance.
Keywords
Gunn devices; logic devices; semiconductor device manufacture; dual gate devices; planar Gunn effect logic device; self aligned Schottky barrier gates;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19760167
Filename
4239726
Link To Document