Title :
Fabrication of planar Gunn-effect logic device with self-aligned Schottky-barrier gates
Author :
Wada, O. ; Yanagisawa, S. ; Takanashi, Hiroyuki
Author_Institution :
Fujitsu Laboratories Ltd., Kawasaki, Japan
Abstract :
A method of fabricating planar Gunn-effect devices with Schottky-barrier gates has been improved by using the self-alignment technique. Dual-gate devices fabricated by this method have fine geometries and exhibited sufficiently good performance.
Keywords :
Gunn devices; logic devices; semiconductor device manufacture; dual gate devices; planar Gunn effect logic device; self aligned Schottky barrier gates;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19760167
