DocumentCode
937287
Title
Measurement of the base diffusion profile of a narrow-basewidth transistor
Author
Booth, R.C.
Author_Institution
Post Office Research Centre, Ipswich, UK
Volume
12
Issue
9
fYear
1976
Firstpage
221
Lastpage
222
Abstract
A technique for routinely determining the intrinsic base diffusion profile in a narrow-basewidth transistor is described. The technique involves the fabrication of a novel Van der Pauw device and the subsequent measurement of the sheet resistance and Hall coefficient of the base region. Diffusion profiles measured in a shallow double-diffused arsenic-emitter boron-base transistor structure by this technique are reported.
Keywords
bipolar transistors; semiconductor doping; Hall coefficient; Van der Pauw device; base diffusion profile; narrow basewidth transistor; shallow diffused As emitter B base transistor; sheet resistance;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19760171
Filename
4239730
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