Title :
The excitonic quantum computer
Author_Institution :
Dipt. di Fisica, Inst. Nazionale per la Fisica della Materia, Torino, Italy
fDate :
3/1/2004 12:00:00 AM
Abstract :
A review of semiconductor-based schemes for the realization of quantum information processing devices is presented. After recalling the fundamentals of quantum information/computation theory, we shall discuss potential implementation schemes based on charge and/or spin degrees of freedom in semiconductor nanostructures. More specifically, we shall present an all-optical implementation scheme of quantum information processing with semiconductor macroatoms/molecules, where the computational degrees of freedom are interband optical transitions (excitonic states) manipulated/controlled by ultrafast sequences of multicolor laser pulses. We shall primarily focus on implementation schemes dealing with charge excitations in GaAs as well as GaN quasi-zero-dimensional structures. We shall finally discuss the possibility to combine charge and spin degrees of freedom, thus, allowing for fast-quantum gates, which do not translate into fast-decoherence times.
Keywords :
III-V semiconductors; excitons; gallium arsenide; nanostructured materials; quantum gates; quantum theory; reviews; wide band gap semiconductors; GaAs; GaAs quasizero dimensional structures; GaN; GaN quasizero-dimensional structures; charge excitations; computational degrees of freedom; excitonic quantum computer; excitonic states; fast-decoherence times; interband optical transitions; multicolor laser pulses; potential implementation schemes; quantum device; quantum gates; quantum information processing; quantum information/computation theory; semiconductor macroatoms; semiconductor molecules; semiconductor nanostructures; semiconductor-based schemes; spin degrees of freedom; Computation theory; Information processing; Laser transitions; Optical computing; Optical control; Quantum computing; Quantum mechanics; Quantum well lasers; Semiconductor nanostructures; Ultrafast optics;
Journal_Title :
Nanotechnology, IEEE Transactions on
DOI :
10.1109/TNANO.2004.824018