Title :
Porous silicon sheds a new light on OEICs
Author :
Collins, R.T. ; Tischler, M.A.
Author_Institution :
IEEE Circuits & Devices Magazine, Piscataway, NJ, USA
Abstract :
Research efforts and developments in understanding the origin of the luminescence of porous silicon are reviewed. The fundamental characteristics of porous silicon are outlined. The quantum confinement model, which is used to characterize the luminescence from porous silicon, and porous silicon´s optical properties, which show substantial instabilities, are discussed. The research into and applications of electroluminescence using porous silicon are also discussed.<>
Keywords :
electroluminescence; elemental semiconductors; luminescence of inorganic solids; optical properties of substances; photoluminescence; porous materials; silicon; electroluminescence; instabilities; luminescence; optical properties; porous Si; quantum confinement model; semiconductors; Luminescence; Optical devices; Optical materials; Optoelectronic devices; Photoluminescence; Photonic band gap; Radiative recombination; Semiconductor materials; Silicon; Stimulated emission;
Journal_Title :
Circuits and Devices Magazine, IEEE
