Title :
Requirement on carrier concentration and geometry of Schottky-electrode-triggered Gunn device
Author :
Hashizume, Nobuo ; Tomizawa, Kazutaka
Author_Institution :
Electrotechnical Laboratory, Tokyo, Japan
Abstract :
From the consideration of a stable domain I/V characteristic and of a practical Schottky electrode bias, it has been made clear that there are requirements for carrier concentration and geometry available for a Schottky-electrode-triggered Gunn device. Numerical examples are given for various carrier concentrations and geometries.
Keywords :
Gunn devices; Schottky effect; carrier density; Schottky electrode triggered Gunn device; carrier concentration; geometry; stable domain I/V characteristic;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19760178
