DocumentCode :
937350
Title :
Field-effect and single-electron transistors based on single-walled carbon nanotubes catalyzed by Al/Ni thin films
Author :
Amlani, Islamshah ; Zhang, Ruth ; Tresek, John ; Tsui, Raymond K.
Author_Institution :
Phys. Sci. Lab., Motorola Labs., Tempe, AZ, USA
Volume :
3
Issue :
1
fYear :
2004
fDate :
3/1/2004 12:00:00 AM
Firstpage :
202
Lastpage :
209
Abstract :
Growth of single-walled carbon nanotubes (SWNTs) via a chemical vapor deposition technique catalyzed by a thin Al/Ni stack is presented. Catalyst islands are defined by lithography, thin film evaporation and lift off technique. The process is fully compatible with conventional micro- and nanolithography techniques. Micrometer size semiconducting SWNT devices have been used to explore field-effect properties of the nanotubes at room temperature while smaller length semiconducting SWNT islands are used to study single-electron charging effects at low temperatures.
Keywords :
aluminium; carbon nanotubes; catalysts; chemical vapour deposition; evaporation; field effect transistors; metallic thin films; nanolithography; nanotube devices; nickel; semiconductor growth; semiconductor materials; semiconductor thin films; single electron transistors; 293 to 298 K; Al-Ni; Al-Ni thin films; C; chemical vapor deposition; field-effect transistors; microlithography; nanolithography; room temperature; semiconducting SWNT devices; semiconducting SWNT islands; single-electron charging effects; single-electron transistors; single-walled carbon nanotubes; thin film evaporation; Carbon nanotubes; Chemical vapor deposition; Lithography; Nanolithography; Semiconductivity; Semiconductor nanotubes; Semiconductor thin films; Single electron transistors; Temperature; Thin film transistors;
fLanguage :
English
Journal_Title :
Nanotechnology, IEEE Transactions on
Publisher :
ieee
ISSN :
1536-125X
Type :
jour
DOI :
10.1109/TNANO.2004.824035
Filename :
1278290
Link To Document :
بازگشت