Title :
High power, low-jitter encoded picosecond pulse generation using an RF-locked self-Q-switched multicontact GaAs/GaAlAs diode laser
Author :
Vasil´ev, P.P. ; White, Ian H. ; Burns, Dave ; Sibbett, W.
Author_Institution :
Sch. of Phys., Bath Univ., UK
Abstract :
The RF locking of a self-Q-switching diode laser is shown to reduce the jitter of a 2.48 GHz train of 1 W peak power picosecond pulses to less than 300 fs. By using direct modulation of the loss in the Q-switched laser, direct encoding of data has been achieved at rates in excess of 2 Gbit/s.
Keywords :
III-V semiconductors; Q-switching; aluminium compounds; encoding; gallium arsenide; high-speed optical techniques; laser mode locking; optical losses; optical modulation; semiconductor lasers; 1 W; 2 Gbit/s; 2.48 GHz; 300 fs; GaAs-GaAlAs; RF locking; encoded picosecond pulse generation; high power; jitter; loss direct modulation; low-jitter; multicontact GaAs/GaAlAs diode laser; self-Q-switching diode laser;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19931061
