DocumentCode
937425
Title
Spatio-spectral characteristics of a high power, high brightness CW InGaAs/AlGaAs unstable resonator semiconductor laser
Author
Bao, Zhen ; DeFreez, R.K. ; Carleson, P.D. ; Moeller, Charles ; Dente, Gregory C.
Author_Institution
Dept. of Electr. Eng. & Appl. Phys., Oregon Graduate Inst., Beaverton, OR, USA
Volume
29
Issue
18
fYear
1993
Firstpage
1597
Lastpage
1599
Abstract
An InGaAs/AlGaAs GRINSCH SQW semiconductor laser with a half-symmetric resonator has been fabricated using focused-ion-beam micromachining (FIBM), and CW operated with output powers up to 1.2 W, and brightness up to 92 MW Cm-2 Sr-1. Its spatio-spectral characteristics and lasing action are investigated, and explained by a core-amplifier model.
Keywords
III-V semiconductors; aluminium compounds; brightness; gallium arsenide; indium compounds; laser cavity resonators; semiconductor lasers; 1.2 W; CW laser; InGaAs-AlGaAs; InGaAs/AlGaAs GRINSCH SQW semiconductor laser; core-amplifier model; focused-ion-beam micromachining; half-symmetric resonator; high brightness; high power; lasing action; spatio-spectral characteristics;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19931064
Filename
233064
Link To Document