Title :
Spatio-spectral characteristics of a high power, high brightness CW InGaAs/AlGaAs unstable resonator semiconductor laser
Author :
Bao, Zhen ; DeFreez, R.K. ; Carleson, P.D. ; Moeller, Charles ; Dente, Gregory C.
Author_Institution :
Dept. of Electr. Eng. & Appl. Phys., Oregon Graduate Inst., Beaverton, OR, USA
Abstract :
An InGaAs/AlGaAs GRINSCH SQW semiconductor laser with a half-symmetric resonator has been fabricated using focused-ion-beam micromachining (FIBM), and CW operated with output powers up to 1.2 W, and brightness up to 92 MW Cm-2 Sr-1. Its spatio-spectral characteristics and lasing action are investigated, and explained by a core-amplifier model.
Keywords :
III-V semiconductors; aluminium compounds; brightness; gallium arsenide; indium compounds; laser cavity resonators; semiconductor lasers; 1.2 W; CW laser; InGaAs-AlGaAs; InGaAs/AlGaAs GRINSCH SQW semiconductor laser; core-amplifier model; focused-ion-beam micromachining; half-symmetric resonator; high brightness; high power; lasing action; spatio-spectral characteristics;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19931064
