• DocumentCode
    937518
  • Title

    780 nm band TM-mode laser operation of GaAsP/AlGaAs tensile-strained quantum-well lasers

  • Author

    Tanaka, Hiroya

  • Author_Institution
    Interdisciplinary Res. Lab., NTT, Tokyo, Japan
  • Volume
    29
  • Issue
    18
  • fYear
    1993
  • Firstpage
    1611
  • Lastpage
    1613
  • Abstract
    Tensile-strained active layer GaAs/AlGaAs separate-confinement-heterostructure quantum-well lasers are reported. These lasers oscillate in the 780 nm band in the TM mode by TM mode gain enhancement in the tensile-strained active layer. The threshold current density of single-quantum-well laser diodes increases rapidly with heatsink temperature. However, triple-quantum-well laser diodes with a cavity length of 485-110 mu m oscillated with a threshold current density of 1.4 and 3.0 kA/cm2.
  • Keywords
    III-V semiconductors; aluminium compounds; current density; gallium arsenide; gallium compounds; laser modes; laser transitions; semiconductor lasers; 110 to 485 micron; 780 nm; GaAsP-AlGaAs; GaAsP/AlGaAs; TM mode; gain enhancement; heatsink temperature; separate-confinement-heterostructure; single-quantum-well laser diodes; tensile-strained quantum-well lasers; threshold current density; triple-quantum-well laser diodes;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19931073
  • Filename
    233073
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=937518