DocumentCode :
937636
Title :
Optoelectronic gating of microwave signals using a silicon microstrip shunt modulator
Author :
Platte, W. ; Appelhans, G.
Author_Institution :
Universitÿt Erlangen-Nÿrnberg, Institut fÿr Hochfrequenztechnik, Erlangen, West Germany
Volume :
12
Issue :
11
fYear :
1976
Firstpage :
270
Lastpage :
271
Abstract :
A new silicon microstrip modulator for optoelectronic gating of microwave signals is described. Gating infrared pulses produces a small semiconductor region of high photoconductivity, which shunts the microstrip transmission line if special strip conductor structures are used. Theoretical and experimental results were found to agree fairly well.
Keywords :
optical modulation; optoelectronic devices; strip line components; Si microstrip shunt modulator; microstrip transmission line; microwave signals; optoelectronic gating; photoconductivity;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19760208
Filename :
4239779
Link To Document :
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