DocumentCode
937636
Title
Optoelectronic gating of microwave signals using a silicon microstrip shunt modulator
Author
Platte, W. ; Appelhans, G.
Author_Institution
Universitÿt Erlangen-Nÿrnberg, Institut fÿr Hochfrequenztechnik, Erlangen, West Germany
Volume
12
Issue
11
fYear
1976
Firstpage
270
Lastpage
271
Abstract
A new silicon microstrip modulator for optoelectronic gating of microwave signals is described. Gating infrared pulses produces a small semiconductor region of high photoconductivity, which shunts the microstrip transmission line if special strip conductor structures are used. Theoretical and experimental results were found to agree fairly well.
Keywords
optical modulation; optoelectronic devices; strip line components; Si microstrip shunt modulator; microstrip transmission line; microwave signals; optoelectronic gating; photoconductivity;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19760208
Filename
4239779
Link To Document