Title :
Photoconductivity response times of InGaAs/InAlAs multiquantum well waveguide modulators
Author :
Moss, David J. ; Sano, Hiroyasu
Author_Institution :
Hitachi Central Res. Lab., Tokyo, Japan
Abstract :
The pulsed photoconductive response times of 10 and 25 well InGaAs/InAlAs quantum well waveguide modulators are investigated. In both devices comparable sweep-out times for electrons and holes and significant reduction in internal quantum efficiency for fields <200 kV/cm are observed. A dependence on bias voltage and quantum well number is observed which suggests that carrier recapture, or sequential tunnelling, is significant for fields near 70 kV but not for fields >200 kV/cm.
Keywords :
III-V semiconductors; aluminium compounds; electro-optical devices; gallium arsenide; indium compounds; optical modulation; optical waveguide components; photoconductivity; semiconductor quantum wells; tunnelling; InGaAs-InAlAs; MQW; bias voltage; carrier recapture; electrons; holes; internal quantum efficiency; multiquantum well; pulsed photoconductive response times; quantum well number; sequential tunnelling; sweep-out times; waveguide modulators;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19931083
