Title :
O-band fast p-i-n-diode switch
Author_Institution :
Microwave Associates Ltd., Dunstable, UK
Abstract :
An O-band fast p-i-n-diode s.p.s.t. switch has been developed which has an insertion loss of ¿ 1.0 dB and an isolation of ¿ 25 dB over a 5% bandwidth. Switching speed is < 1 ns and estimated power handling is ¿ 1 W c.w. The unit is to be used as a modulator in a 60 GHz, 130 Mbit/s digital radio data link under development at RSRE, Malvern, England.
Keywords :
semiconductor diodes; semiconductor switches; solid-state microwave devices; 60 GHz 130 Mbit/s digital radio data link; O-band fast PIN diode switch; insertion loss; modulator; power handling;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19760210
