DocumentCode
937657
Title
O-band fast p-i-n-diode switch
Author
Paffard, A.J.
Author_Institution
Microwave Associates Ltd., Dunstable, UK
Volume
12
Issue
11
fYear
1976
Firstpage
272
Abstract
An O-band fast p-i-n-diode s.p.s.t. switch has been developed which has an insertion loss of ¿ 1.0 dB and an isolation of ¿ 25 dB over a 5% bandwidth. Switching speed is < 1 ns and estimated power handling is ¿ 1 W c.w. The unit is to be used as a modulator in a 60 GHz, 130 Mbit/s digital radio data link under development at RSRE, Malvern, England.
Keywords
semiconductor diodes; semiconductor switches; solid-state microwave devices; 60 GHz 130 Mbit/s digital radio data link; O-band fast PIN diode switch; insertion loss; modulator; power handling;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19760210
Filename
4239781
Link To Document