• DocumentCode
    937693
  • Title

    Collector-base capacitance of high frequency integrated bipolar transistors

  • Author

    Kwesah, A.H. ; McPhun, M.K.

  • Author_Institution
    University of Warwick, Engineering Department, Coventry, UK
  • Volume
    12
  • Issue
    11
  • fYear
    1976
  • Firstpage
    275
  • Lastpage
    276
  • Abstract
    A method of obtaining the correct emitter junction capacitance Cb´e from the measured device parameters is presented. This method is shown to apply to integrated bipolar transistors having fT ¿ 2.5 GHz.
  • Keywords
    bipolar transistors; capacitance; equivalent circuits; monolithic integrated circuits; solid-state microwave devices; collector base capacitance; emitter junction capacitance; high frequency integrated bipolar transistors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19760213
  • Filename
    4239786
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=937693