DocumentCode
937707
Title
High-power and high-temperature operation of eight-element monolithic, 780 nm MQW laser diode array on 50 mu m centres
Author
Shima, Akio ; Kadowaki, Takashi ; Miura, Tsuyoshi ; Miyashita, Makoto ; Kageyama, S. ; Aiga, M. ; Ikeda, Ken-ichi
Author_Institution
Microwave Devices Lab., Mitsubishi Electr. Corp., Mizuhara Itami, Japan
Volume
29
Issue
18
fYear
1993
Firstpage
1636
Lastpage
1638
Abstract
A 50 mu m-spaced, eight-element individually addressable laser diode array with an AlGaAs multiquantum well (MQW) active layer lasing at around 780 nm has been fabricated. Highly uniform power/current characteristics up to 100 mW per element at 50 degrees C under CW conditions are realised for the first time. Within the array, variations in the operating currents and the beam characteristics such as the divergence and the wavelength are less than +or-4.6% and less than +or-2.2%, respectively.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; laser transitions; semiconductor laser arrays; 100 mW; 50 degC; 50 micron; 780 nm; AlGaAs multiquantum well; CW conditions; MQW; MQW laser diode array; active layer; high-temperature operation; multibeam optical disc drive; uniform power/current characteristics;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19931090
Filename
233090
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