Title :
pMOS transistors for dosimetric application
Author :
Ristic, G. ; Golubovic, S. ; Pejovic, M.
Author_Institution :
Fac. of Electron. Eng., Serbia, Yugoslavia
Abstract :
The dosimetric properties of Al-gate pMOS transistors for low-level dose, are investigated. A radiation environment was simulated by 60Co gamma rays. The experiments have demonstrated that pMOS transistors with a thickness of 2 mu m, irradiated to 1000 rad (Si) with 9 V on the gate, provide a good sensitivity of 20 mV/rad, as well as a stability of 4.2% after 1000 h room-temperature annealing.
Keywords :
dosimeters; gamma-ray effects; insulated gate field effect transistors; nuclear electronics; 1000 h; 1000 rad; 2 micron; 293 K; 60Co gamma rays; Al-SiO 2-Si; Al-gate pMOS transistors; annealing; dosimetric properties; sensitivity; stability;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19931095
